Electron‐beam‐induced decomposition of trimethylamine on Si(100)‐2 × 1

AbstractElectron‐beam‐induced decomposition of trimethylamine ((CH3)3N) adsorbed on the Si(100)‐2 × 1 surface has been investigated using temperature‐programmed desorption, electron‐stimulated desorption, time‐of‐flight mass spectrometry, and x‐ray photoelectron spectroscopy. At issue is the cleavage of C–H bonds vs. cleavage of N–C bonds in the dissociation of trimethylamine (TMA), which is a dative‐bonded adduct on the Si dimer. Methyl groups are cleaved from the adsorbed TMA by electron irradiation. In addition, hydrogen is desorbed from the TMA and/or its fragments, which influences the decomposition of the TMA to smaller adsorbed fragments. The appearance of a thermal desorption peak for mass 42 subsequent to electron irradiation suggests the production of reaction intermediates similar to those reported previously in gas‐phase decomposition of TMA at high temperature. Copyright © 2003 John Wiley & Sons, Ltd.