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Quantum-Confined Stark Effect in InGaAs/InP Quantum Wells Grown by Metal-Organic Chemical Vapor Deposition
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Multiple quantum well (MQW), composed of alternate very thin layers of two different semiconductors, show unusual optical properties at room temperature. One effect of particular recent interest is the quantum-confined Stark effect (QCSE)1. In the QCSE, electric fields applied perpendicular to the MQW layers can shift the optical absorption edge to lower photon energies with the exciton absorption peaks remaining clearly resolved. This electroabsorptive effect has been applied to make small, high-speed optical modulators2 and optical switching and signal-processing devices3 in GaAs/GaAlAs MQW.
Title: Quantum-Confined Stark Effect in InGaAs/InP Quantum Wells Grown by Metal-Organic Chemical Vapor Deposition
Description:
Multiple quantum well (MQW), composed of alternate very thin layers of two different semiconductors, show unusual optical properties at room temperature.
One effect of particular recent interest is the quantum-confined Stark effect (QCSE)1.
In the QCSE, electric fields applied perpendicular to the MQW layers can shift the optical absorption edge to lower photon energies with the exciton absorption peaks remaining clearly resolved.
This electroabsorptive effect has been applied to make small, high-speed optical modulators2 and optical switching and signal-processing devices3 in GaAs/GaAlAs MQW.
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