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Optical Characterization of Very Thin Hydrogenated Amorphous Silicon Films Using Spectroscopic Ellipsometry
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Optical properties of very thin amorphous silicon films have been characterized by means of spectroscopic ellipsometry. Second derivatives of imaginary dielectric functions with respect to energy are compared. Etching-off the surface oxide is effective in determining the correct film thickness and dielectric functions. Complex refractive indices are obtained for films thinner than 50 nm. Calculated optical energy gap is found to increase for thinner films. The tendency is ascribed to the existence of a thin interface layer consisting of amorphous silicon and void.
Title: Optical Characterization of Very Thin Hydrogenated Amorphous Silicon Films Using Spectroscopic Ellipsometry
Description:
Optical properties of very thin amorphous silicon films have been characterized by means of spectroscopic ellipsometry.
Second derivatives of imaginary dielectric functions with respect to energy are compared.
Etching-off the surface oxide is effective in determining the correct film thickness and dielectric functions.
Complex refractive indices are obtained for films thinner than 50 nm.
Calculated optical energy gap is found to increase for thinner films.
The tendency is ascribed to the existence of a thin interface layer consisting of amorphous silicon and void.
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