New materials based on inp-cdte, cds-cdte systems. Their comparative properties

Methods for production of solid solutions of InP-CdTe and CDs-CdTe systems (hetero- and homo-substitution) have been developed. The obtained solid solutions were certificated on the basis of the results of X-ray, micro-, electron-microscopic and optical studies as solid substitution solutions with structures of sphalerite and wurtzite, respectively; the average sizes (dav) and average numbers (nav) of the most represented component particles, the values of the band gap (∆E) of solid solutions were determined. The acid-base properties of the surfaces of components of the systems were studied, their slightly acidic character is shown with relatively high acidity of the surfaces of solid solutions of the InP-CdTe system. Dependences on the composition of volumetric and surface properties were established. Explanations of the found commonalities and differences in the behavior of solid solutions of the systems were given by the predominant influence of either a common component (CdTe) or components (InP, CDs) differing in the values of the band gap, electronegativity difference and the fraction of ionic bond. Suggestions were made about the possibilities of searching new adsorbents - materials for semiconductor gas analysis.