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Numerical Investigation on Hole-Injection Characteristics of NiO/SiC Heterojunction
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Abstract
Numerical investigation on hole-injection characteristics of NiO/SiC heterojunction is carried out in this paper. Theory analysis and numerical simulation both indicate the excellent hole-injection characteristic of p-NiO/n-SiC heterojunction. The pn junction diode and pnp phototransistor are constructed and simulated to evaluate hole-injection characteristics p-NiO/n-SiC heterojunction. The results indicate that the p-NiO/n-SiC heterojunction shows great potential advantage in enhancing current gain of pnp phototransistor. By using NiO/SiC heterojunction as the emitter junction, the current gain of SiC based pnp phototransistor can be increased by about 96.3 times.
Title: Numerical Investigation on Hole-Injection Characteristics of NiO/SiC Heterojunction
Description:
Abstract
Numerical investigation on hole-injection characteristics of NiO/SiC heterojunction is carried out in this paper.
Theory analysis and numerical simulation both indicate the excellent hole-injection characteristic of p-NiO/n-SiC heterojunction.
The pn junction diode and pnp phototransistor are constructed and simulated to evaluate hole-injection characteristics p-NiO/n-SiC heterojunction.
The results indicate that the p-NiO/n-SiC heterojunction shows great potential advantage in enhancing current gain of pnp phototransistor.
By using NiO/SiC heterojunction as the emitter junction, the current gain of SiC based pnp phototransistor can be increased by about 96.
3 times.
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