Metalorganic MBE Growth of Nitrogen-doped ZnSe: TAN Doping and Nitrogen Plasma Doping

Growth of ZnSe and nitrogen doping were carried out by metalorganic molecular beam epitaxy (MOMBE). In this study metalorganic precursors were introduced into the growth chamber directly without precracking. We studied two nitrogen doping techniques. First, doping with the nitrogen precursor triallylamine (TAN) was studied. It was found that TAN decomposes above 300°C by quadrupole mass spectrometry. The doping properties of TAN were critically dependent on the VI/II ratio during growth. However contrary to our expectation, the doped ZnSe films tended to be n-type. The other nitrogen-doping technique involves doping with nitrogen gas activated by an electron cyclotron resonance plasma. In the samples doped with the nitrogen plasma, donor-acceptor pair emission was dominant. The net acceptor concentration up to 2.3×1017 cm-3 was measured in samples grown using this doping technique.