Second-order nonlinear frequency conversion in InGaP-on-insulator waveguides

InGaP integrated on a silicon substrate has emerged as a promising platform for nonlinear and quantum photonics, offering high nonlinear conversion efficiency and scalability with silicon-based fabrication infrastructure. This work presents an experimental demonstration of sum- and difference-frequency generation in InGaP waveguides. We generate light at 930 nm, 1550 nm and 2325 nm, achieving conversion efficiencies of 4.5 ± 0.5 /W, 1.4 ± 0.2 /W and 0.43 ± 0.04 /W, respectively. These results highlight the potential of InGaP-on-insulator for advanced photonic applications, including broadband infrared light generation and quantum frequency conversion. We discuss a roadmap for this technology to achieve even broader wavelength coverage, higher efficiencies and quantum-frequency conversion of single-photons.