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A wide input range, external capacitor-less LDO with fast transient response
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A high-voltage, external capacitor-less low-dropout regulator (HVLDO)
with a transient enhancement loop is presented in this work. The
proposed HVLDO is designed with high withstand voltage LDMOS transistors
and a transient enhancement loop is proposed to properly inject or sink
current to/from the gate and output nodes of the power transistors to
achieve fast transient response under wide load range conditions and
high stability. This HVLDO is fabricated in 0.5 μm SOI BCD process with
an active area of 0.29 mm2. It operates over an input voltage range of
5.2 to 20 V, provides an output voltage of 5 V and a maximum load of 100
mA, while supporting load capacitances from 0 pF to 1 μF. Measurements
show that this design has a line regulation of 0.88 mV/V and a load
regulation of 0.22 mV/mA. The proposed HVLDO features fast line
transient response of 60/20 mV@9.8 V/µs, fast load transient response of
30/70 mV@100 mA/µs, and recovery time of 2 µs without external
capacitors. Compared with the prior art, this work achieves the best
transient FOM of 12.19 fs.
Title: A wide input range, external capacitor-less LDO with fast transient response
Description:
A high-voltage, external capacitor-less low-dropout regulator (HVLDO)
with a transient enhancement loop is presented in this work.
The
proposed HVLDO is designed with high withstand voltage LDMOS transistors
and a transient enhancement loop is proposed to properly inject or sink
current to/from the gate and output nodes of the power transistors to
achieve fast transient response under wide load range conditions and
high stability.
This HVLDO is fabricated in 0.
5 μm SOI BCD process with
an active area of 0.
29 mm2.
It operates over an input voltage range of
5.
2 to 20 V, provides an output voltage of 5 V and a maximum load of 100
mA, while supporting load capacitances from 0 pF to 1 μF.
Measurements
show that this design has a line regulation of 0.
88 mV/V and a load
regulation of 0.
22 mV/mA.
The proposed HVLDO features fast line
transient response of 60/20 mV@9.
8 V/µs, fast load transient response of
30/70 mV@100 mA/µs, and recovery time of 2 µs without external
capacitors.
Compared with the prior art, this work achieves the best
transient FOM of 12.
19 fs.
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