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Defects and Their Annealing Properties in B+-Implanted Hg0.78Cd0.22Te Studied by Positron Annihilation
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Defects and their annealing properties in B+-implanted Hg0.78Cd0.22Te (p-type) were studied using the positron annihilation technique. For an unimplanted specimen, the major species of defects was identified to be Hg vacancies, V
Hg, and its concentration was estimated to be 6×1015 cm-3. For the B+-implanted specimen, a damaged region showed n-type character, and vacancy-type defects were found to be present in this region. Below the n-type layer, about 50% V
Hg was annihilated by the recombination between V
Hg and Hg atoms. After 150° C annealing, the mean size of open space of the vacancy-type defects in the n-type layer was found to decrease. At the same annealing temperature, the electron concentration in the n-type layer also decreased. Thus, an origin of donors was attributed to interstitial-type defects. The annealing temperature of the vacancy-type defects introduced by ion implantation was determined to be 300° C
Title: Defects and Their Annealing Properties in B+-Implanted Hg0.78Cd0.22Te Studied by Positron Annihilation
Description:
Defects and their annealing properties in B+-implanted Hg0.
78Cd0.
22Te (p-type) were studied using the positron annihilation technique.
For an unimplanted specimen, the major species of defects was identified to be Hg vacancies, V
Hg, and its concentration was estimated to be 6×1015 cm-3.
For the B+-implanted specimen, a damaged region showed n-type character, and vacancy-type defects were found to be present in this region.
Below the n-type layer, about 50% V
Hg was annihilated by the recombination between V
Hg and Hg atoms.
After 150° C annealing, the mean size of open space of the vacancy-type defects in the n-type layer was found to decrease.
At the same annealing temperature, the electron concentration in the n-type layer also decreased.
Thus, an origin of donors was attributed to interstitial-type defects.
The annealing temperature of the vacancy-type defects introduced by ion implantation was determined to be 300° C.
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