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Enhanced piezoelectricity in YbGaN films near phase boundary
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Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient kt for the YbxGa1−xN films increases with the Yb concentration from x = 0 to 0.3. Yb0.30Ga0.70N film near the phase boundary exhibited a maximum kt of 3.1%, which is approximately 2.5 times larger than that for a pure GaN.
Title: Enhanced piezoelectricity in YbGaN films near phase boundary
Description:
Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors.
In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated.
Thickness extensional mode electromechanical coupling coefficient kt for the YbxGa1−xN films increases with the Yb concentration from x = 0 to 0.
3.
Yb0.
30Ga0.
70N film near the phase boundary exhibited a maximum kt of 3.
1%, which is approximately 2.
5 times larger than that for a pure GaN.
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