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High-Barrier Schottky Diodes on N-Type Si(100) Due to Hydrogen Plasma
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Electrical characteristics of Al/Si diodes exposed to hydrogen-containing plasmas have been measured. The Schottky barrier heights increase compared with that of a control diode. The Schottky barrier height increases consistently with an increase in an applied rf power or hydrogen concentration in the plasma. Furthermore, the Si surface exposed to argon or hydrogen plasma has been observed by X-ray photoelectron spectroscopy. It is concluded that exposure of the Si surface to hydrogen plasma produced a hydrogenated amorphous layer in the Si substrate. Therefore, the increase in the Schottky barrier height is attributed to the formation of the Schottky barrier at the interface between the Al metal and the hydrogenated amorphous layer.
Title: High-Barrier Schottky Diodes on N-Type Si(100) Due to Hydrogen Plasma
Description:
Electrical characteristics of Al/Si diodes exposed to hydrogen-containing plasmas have been measured.
The Schottky barrier heights increase compared with that of a control diode.
The Schottky barrier height increases consistently with an increase in an applied rf power or hydrogen concentration in the plasma.
Furthermore, the Si surface exposed to argon or hydrogen plasma has been observed by X-ray photoelectron spectroscopy.
It is concluded that exposure of the Si surface to hydrogen plasma produced a hydrogenated amorphous layer in the Si substrate.
Therefore, the increase in the Schottky barrier height is attributed to the formation of the Schottky barrier at the interface between the Al metal and the hydrogenated amorphous layer.
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