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BiSrCaCuO/BiSrCuO S/N Heterostructure Grown by Halide Chemical Vapor Deposition
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Thin-film S/N heterostructures of superconducting BiSrCaCuO and metallic BiSrCuO with good surface morphology, crystallinity, and superconducting properties were formed on (100) MgO substrates by halide chemical vapor deposition (CVD). Critical temperatures (T
c at zero resistance) and critical current densities (J
c) of the BiSrCaCuO films on MgO substrate were T
c=75 to 80 K and J
c=1×106 A/cm2 at 60 K. Resistivity of the metallic BiSrCuO films was 0.7 to 1.5×10-3 Ω·cm from 10 to 300 K. High-resolution transmission electron microscopy (HRTEM) images showed the interface between the BiSrCaCuO and BiSrCuO films to be atomically abrupt. The critical temperature of S/N multilayer samples was about 75 K.
Title: BiSrCaCuO/BiSrCuO S/N Heterostructure Grown by Halide Chemical Vapor Deposition
Description:
Thin-film S/N heterostructures of superconducting BiSrCaCuO and metallic BiSrCuO with good surface morphology, crystallinity, and superconducting properties were formed on (100) MgO substrates by halide chemical vapor deposition (CVD).
Critical temperatures (T
c at zero resistance) and critical current densities (J
c) of the BiSrCaCuO films on MgO substrate were T
c=75 to 80 K and J
c=1×106 A/cm2 at 60 K.
Resistivity of the metallic BiSrCuO films was 0.
7 to 1.
5×10-3 Ω·cm from 10 to 300 K.
High-resolution transmission electron microscopy (HRTEM) images showed the interface between the BiSrCaCuO and BiSrCuO films to be atomically abrupt.
The critical temperature of S/N multilayer samples was about 75 K.
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