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High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy

We report the first mobility enhancement of the two-dimensional electron gas (2DEG) by suppressing alloy scattering in an ordered InGaAs/N-InAlAs heterostructure grown on a (110)-oriented InP substrate by molecular beam epitaxy. Transmission electron microscopy revealed CuAu-I ordered structure consisting of an (InAs)1(GaAs)1 monolayer superlattice in both the <110> growth and <001> directions in the InGaAs channel layer. This heterostructure showed a 2DEG mobility of 153000 cm2/V·s, with a sheet electron concentration (N s) of 9.9×1011 cm-2 at 6 K (95000 cm2/V·s with N s of 1.0×1012 cm-2 at 77 K). This mobility is, to our knowledge, the highest reported for InGaAs/N-InAlAs lattice-matched systems.

IOP Publishing

Yoshiaki NAKATA Osamu UEDA Osamu UEDA Toshio FUJII Toshio FUJII

Japanese Journal of Applied Physics

2005

Title: High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy

Description:

Transmission electron microscopy revealed CuAu-I ordered structure consisting of an (InAs)1(GaAs)1 monolayer superlattice in both the <110> growth and <001> directions in the InGaAs channel layer.

This heterostructure showed a 2DEG mobility of 153000 cm2/V·s, with a sheet electron concentration (N s) of 9.

9×1011 cm-2 at 6 K (95000 cm2/V·s with N s of 1.

0×1012 cm-2 at 77 K).

This mobility is, to our knowledge, the highest reported for InGaAs/N-InAlAs lattice-matched systems.

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High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy

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