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A Superlow-Noise AlGaAs/InGaAs/GaAs Doped Channel Heterojunction Field-Effect Transistor (DC-HFET) with 0.15-µm Gate Length
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A doped channel heterojunction field-effect transistor (DC-HFET) has been developed using an AlGaAs/InGaAs/GaAs pseudomorphic system which has an electron confinement effect superior to that of an AlGaAs/GaAs system. An excellent minimum noise figure (N
F
min) of 0.65 dB and associated gain (Ga) of 11.3 dB were realized at 12 GHz (drain current (I
ds)=18 mA, drain voltage (V
ds)=2 V). The NF had weak dependences on the I
ds and frequency, as in the case of high electron mobility transistors (HEMTs). The transconductance (g
m) at I
ds=10 mA was 385 mS/mm and maximum g
m reached 570 mS/mm (I
ds=50 mA).
Title: A Superlow-Noise AlGaAs/InGaAs/GaAs Doped Channel Heterojunction Field-Effect Transistor (DC-HFET) with 0.15-µm Gate Length
Description:
A doped channel heterojunction field-effect transistor (DC-HFET) has been developed using an AlGaAs/InGaAs/GaAs pseudomorphic system which has an electron confinement effect superior to that of an AlGaAs/GaAs system.
An excellent minimum noise figure (N
F
min) of 0.
65 dB and associated gain (Ga) of 11.
3 dB were realized at 12 GHz (drain current (I
ds)=18 mA, drain voltage (V
ds)=2 V).
The NF had weak dependences on the I
ds and frequency, as in the case of high electron mobility transistors (HEMTs).
The transconductance (g
m) at I
ds=10 mA was 385 mS/mm and maximum g
m reached 570 mS/mm (I
ds=50 mA).
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