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Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition
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High-quality GaAs layers with dislocation densities of less than 5×106 cm-2 on Si substrates have been obtained through a combination of thermal-cycle annealing and selective-area growth using the metalorganic chemical vapor deposition method. The Al0.3Ga0.7As/GaAs single quantum well laser grown on a Si substrate by means of these techniques has a pulsed threshold current of 165 mA (3.92 kA/cm2) at 300 K and a CW threshold current of 152 mA (4.78 kA/cm2) at 200 K. Stacking faults or microtwins near the boundary of the SiO2 mask are thought to cause a pulsed operation at 300 K for the selective-area-grown laser.
Title: Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition
Description:
High-quality GaAs layers with dislocation densities of less than 5×106 cm-2 on Si substrates have been obtained through a combination of thermal-cycle annealing and selective-area growth using the metalorganic chemical vapor deposition method.
The Al0.
3Ga0.
7As/GaAs single quantum well laser grown on a Si substrate by means of these techniques has a pulsed threshold current of 165 mA (3.
92 kA/cm2) at 300 K and a CW threshold current of 152 mA (4.
78 kA/cm2) at 200 K.
Stacking faults or microtwins near the boundary of the SiO2 mask are thought to cause a pulsed operation at 300 K for the selective-area-grown laser.
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