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Preparation and Characterization of Sol-Gel Derived Epitaxial and Oriented Pb(Zr0.52Ti0.48)O3 Thin Films
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Epitaxial and oriented Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared from nonhydrolyzed polymeric precursors. PZT thin films with a single (001) orientation were prepared on SrTiO3 (100) and MgO (100) substrates by solid-phase epitaxial growth. Crystallization of sol-gel PZT with a (111) preferred orientation was also observed on sapphire (0001) substrates. The guided wave modes were excited by a prism coupling method for PZT thin films crystallized on MgO (100) at 700° C, and the verified refractive index was as high as 2.561. Dielectric constant and remnant polarization of epitaxial PZT thin films, crystallized on conductive Nb-SrTiO3 (100) substrates at 650° C, were 448 at 10 kHz and 15 µ C/cm2, respectively.
Title: Preparation and Characterization of Sol-Gel Derived Epitaxial and Oriented Pb(Zr0.52Ti0.48)O3 Thin Films
Description:
Epitaxial and oriented Pb(Zr0.
52Ti0.
48)O3 (PZT) thin films were prepared from nonhydrolyzed polymeric precursors.
PZT thin films with a single (001) orientation were prepared on SrTiO3 (100) and MgO (100) substrates by solid-phase epitaxial growth.
Crystallization of sol-gel PZT with a (111) preferred orientation was also observed on sapphire (0001) substrates.
The guided wave modes were excited by a prism coupling method for PZT thin films crystallized on MgO (100) at 700° C, and the verified refractive index was as high as 2.
561.
Dielectric constant and remnant polarization of epitaxial PZT thin films, crystallized on conductive Nb-SrTiO3 (100) substrates at 650° C, were 448 at 10 kHz and 15 µ C/cm2, respectively.
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