Well layer design for 1eV absorption band edge of GaInAs/GaNAs super-lattice solar cell

The GaInAs/GaNAs super-lattice with a feature of space separation of In and N constituents as an active region, is one of the most important ways to achieve 1 eV GaInNAs-based solar cells. To experimentally realize the high-quality super-lattice structure with the required band-gap, Kronig-Penney model is used to obtain the barrier thickness dependence on the well thickness and its composition. Meanwhile, the strain state of GaInAs/GaNAs SLs with various well choices is also discussed. Results show that when both the GaNAs and GaInAs act as the well layers the super-lattice can achieve 1 eV band-gap, and when the GaN0.04As0.96 is considered to act as the well layer, the entire GaInAs/GaNAs SLs have smaller strain accumulations as compared with the case of Ga0.7In0.3As as the well layer in the super-lattice structure.