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Measurement of Sidewall Roughness of InP Etched by Reactive Ion Beam Etching
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We have quantitatively measured the sidewall roughness of InP etched by reactive
ion beam etching (RIBE) for the first time. An electron probe surface roughness analyzer
was employed. The minimum value of average sidewall roughness appeared to be 1 nm and the
peak-to-peak roughness appeared to be 6 nm. The etching conditions were an ion extraction
voltage of 400 V and a Cl2 gas pressure of 1.2× 10-3 Torr.
It is found that the etched sidewall roughness is decreased by lower-ion-extraction-voltage
etching in a constant gas pressure, as well as by higher-gas-pressure etching with a constant ion extraction voltage.
Title: Measurement of Sidewall Roughness of InP Etched by Reactive Ion Beam Etching
Description:
We have quantitatively measured the sidewall roughness of InP etched by reactive
ion beam etching (RIBE) for the first time.
An electron probe surface roughness analyzer
was employed.
The minimum value of average sidewall roughness appeared to be 1 nm and the
peak-to-peak roughness appeared to be 6 nm.
The etching conditions were an ion extraction
voltage of 400 V and a Cl2 gas pressure of 1.
2× 10-3 Torr.
It is found that the etched sidewall roughness is decreased by lower-ion-extraction-voltage
etching in a constant gas pressure, as well as by higher-gas-pressure etching with a constant ion extraction voltage.
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