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Characterization of Sidewall Damage Induced by Reactive Ion-Beam Etching
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The sidewall damage induced by reactive ion-beam etching (RIBE) with Cl2 has been studied. The sidewall damage depth was estimated from the ion-beam-angle dependence, and the photoluminescence (PL) emitted from the etched sidewall of a GaInAsP/InP DH wafer was directly measured. The sidewall damage depth of an InP substrate was estimated as less than a few hundred angstroms at an extraction voltage of 400 V. The PL intensity from the sidewall of a GaInAsP/InP DH wafer decreased considerably after RIBE, compared with that of a cleaved facet. The deteriorated PL intensity was recovered remarkably through passivation with (NH4)2S
x
.
Title: Characterization of Sidewall Damage Induced by Reactive Ion-Beam Etching
Description:
The sidewall damage induced by reactive ion-beam etching (RIBE) with Cl2 has been studied.
The sidewall damage depth was estimated from the ion-beam-angle dependence, and the photoluminescence (PL) emitted from the etched sidewall of a GaInAsP/InP DH wafer was directly measured.
The sidewall damage depth of an InP substrate was estimated as less than a few hundred angstroms at an extraction voltage of 400 V.
The PL intensity from the sidewall of a GaInAsP/InP DH wafer decreased considerably after RIBE, compared with that of a cleaved facet.
The deteriorated PL intensity was recovered remarkably through passivation with (NH4)2S
x
.
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