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Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer
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The polytype structural variations of a set of SiC bulk wafers with different Nitrogen (N) doping levels, prepared by Physical Vapore Deposition (PVD), are studied. The initial growth conditions were used to produce 6H-polytype SiC, which has been approved for the undoped and lightly doped materials. However, when extreme high N-dopants were applied, the obtained wafer was found with 4H- and 15R-polytype features. Our experimental results of HR-TEM and Raman scattering have revealed clearly the polytype transformation, indicating that the inducement of N in the reactor leads to the polytype transformation of the resulted SiC crystal.
Trans Tech Publications, Ltd.
Title: Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer
Description:
The polytype structural variations of a set of SiC bulk wafers with different Nitrogen (N) doping levels, prepared by Physical Vapore Deposition (PVD), are studied.
The initial growth conditions were used to produce 6H-polytype SiC, which has been approved for the undoped and lightly doped materials.
However, when extreme high N-dopants were applied, the obtained wafer was found with 4H- and 15R-polytype features.
Our experimental results of HR-TEM and Raman scattering have revealed clearly the polytype transformation, indicating that the inducement of N in the reactor leads to the polytype transformation of the resulted SiC crystal.
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