Design Optimization of Silicon-Based Optically Excited Terahertz Wave Modulation

The modulation of a terahertz (THz) wave on amplitude, phase and polarization is important for the application of THz technology, especially in the field of imaging, and is one of the current research hotspots. Silicon-based, optically excited THz modulator is a wavefront modulation technique with a simple, compact and reconfigurable optical path. It can realize the dynamic modulation of THz wavefronts by only changing the projected two-dimensional pattern, but it still suffers from the problems of lower modulation efficiency and slower modulation rates. In this article, the Drude model in combination with the multiple thin layers structure model and Fresnel matrix method is used to compare the modulation efficiencies of three modulation modes and more factors. The method is more accurate than the popular proposed method, especially when the thickness of the excited photoconductive layers reaches a few hundred microns. In comparing the three modes, namely transmission, ordinary reflection and total internal reflection, it is found the total internal reflection modulation mode has the best modulation efficiency. Further, under this mode, the effects of three factors, including the lifetime of photo-excited carriers, the wavelength of pump light and the frequency of THz wave, on the performance of THz modulator are analyzed. The simulation results show that the realization of total internal reflection using silicon prisms is a simple and effective method to improve the modulation efficiency of a silicon-based optically excited THz modulator, which provides references for the design of a photo-induced THz modulator.