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Amorphous silicon–indium–zinc oxide semiconductor thin film transistors processed below 150 °C
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Amorphous silicon–indium–zinc–oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below 150 °C. The a-SIZO TFT exhibited a field effect mobility of 21.6 cm2/V s and an on/off ratio of 107. The stabilities of a-SIZO TFT and indium–zinc–oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage (Vth) compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in Vth in a-SIZO TFT without deteriorating mobility of higher than 21.6 cm2/V s.
Title: Amorphous silicon–indium–zinc oxide semiconductor thin film transistors processed below 150 °C
Description:
Amorphous silicon–indium–zinc–oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below 150 °C.
The a-SIZO TFT exhibited a field effect mobility of 21.
6 cm2/V s and an on/off ratio of 107.
The stabilities of a-SIZO TFT and indium–zinc–oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.
7 V shift for threshold voltage (Vth) compared to 10.
8 V shift in IZO TFT after bias temperature stress.
Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in Vth in a-SIZO TFT without deteriorating mobility of higher than 21.
6 cm2/V s.
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