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Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes
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Room temperature current–voltage measurements have been made on InAs/AlSb/GaSb resonant interband tunnel diodes irradiated with 2 MeV protons to determine the effect of displacement damage on the negative resistance peak current Ip and the peak-to-valley current ratio P/V. Diodes with 5 and 13 ML AlSb barrier thickness were irradiated and measured several times until the total fluences reached 1×1015 and 2×1014 H+/cm2, respectively. The current due to radiation-induced defects has a nonlinear voltage dependence, with a large increase occurring in the voltage range between the negative resistance peak and the valley. Ip increased <50% while a large increase in the valley current decreased the P/V ratios to about 2.
Title: Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes
Description:
Room temperature current–voltage measurements have been made on InAs/AlSb/GaSb resonant interband tunnel diodes irradiated with 2 MeV protons to determine the effect of displacement damage on the negative resistance peak current Ip and the peak-to-valley current ratio P/V.
Diodes with 5 and 13 ML AlSb barrier thickness were irradiated and measured several times until the total fluences reached 1×1015 and 2×1014 H+/cm2, respectively.
The current due to radiation-induced defects has a nonlinear voltage dependence, with a large increase occurring in the voltage range between the negative resistance peak and the valley.
Ip increased <50% while a large increase in the valley current decreased the P/V ratios to about 2.
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