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Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory
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AbstractThe oxygenated amorphous carbon (α‐COx)‐based resistive random‐access memory (ReRAM) generates a bi‐stable resistance via electroforming or the rupture of the conductive CC sp2 covalent bond filaments in the α‐COx resistive layer, which can be determined by the dependency of the intensity distribution of the oxygen ion (O2−), for the 3D cross‐point nonvolatile memory as the new memory hierarchical structure for an artificial neural network. The conductive CC sp2 and insulating CC sp3 covalent bonds are formed near the top of the resistive layer by drifting and diffusing O2− toward the bottom and top parts of the layer in the set and reset processes, respectively. The reset process has a different bi‐stable resistance generation mechanism from binary metal oxide‐based ReRAM and conductive bridge random‐access memory. The conductive CC sp2 covalent bond intensity in the α‐COx resistive layer affects the forming voltage and the write and erase endurance cycle of the α‐COx‐based ReRAM cells. The result shows that a lower proportion of conductive CC sp2 covalent bond leads to longer write and erase endurance cycles.
Title: Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory
Description:
AbstractThe oxygenated amorphous carbon (α‐COx)‐based resistive random‐access memory (ReRAM) generates a bi‐stable resistance via electroforming or the rupture of the conductive CC sp2 covalent bond filaments in the α‐COx resistive layer, which can be determined by the dependency of the intensity distribution of the oxygen ion (O2−), for the 3D cross‐point nonvolatile memory as the new memory hierarchical structure for an artificial neural network.
The conductive CC sp2 and insulating CC sp3 covalent bonds are formed near the top of the resistive layer by drifting and diffusing O2− toward the bottom and top parts of the layer in the set and reset processes, respectively.
The reset process has a different bi‐stable resistance generation mechanism from binary metal oxide‐based ReRAM and conductive bridge random‐access memory.
The conductive CC sp2 covalent bond intensity in the α‐COx resistive layer affects the forming voltage and the write and erase endurance cycle of the α‐COx‐based ReRAM cells.
The result shows that a lower proportion of conductive CC sp2 covalent bond leads to longer write and erase endurance cycles.
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