Switching Performance Enhancement in Gallium Oxide-based Multilevel RRAM Devices using Graphene Oxide Insertion Layer

Recently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high density storage and in-memory computing applications. However, the traditional RRAM, which accommodates two states depending on applied voltage, cannot meet the high density requirement in the era of big data. Many research groups have demonstrated that RRAM possesses the possibility of multi-level cell to overcome the demand of mass storage. Among numerous semiconductor materials, gallium oxide, as the fourth-generation semiconductor material, is highly-profile due to its excellent material proper-ties, and already be widely used in optoelectronics, high-power, resistive switching device and so on, due to its wide bandgap and transparent properties. In this study, we have successfully demonstrated the Al/GO/Ga2O3/ITO RRAM to achieve the possibility of two-bit storage. Compared to the single-layer counterpart, the bilayer structure has excellent electrical properties and stable reliability. The endurance characteristics could be enhanced above 100 switching cycles with an ON/OFF ratio of over 103. Moreover, the filament models are also described in this thesis to clarify the transport mechanisms.