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Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy
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The compositional dependence of the electronic band structure of (AlxGa1−x)0.52In0.48P lattice matched to GaAs is reported. Epitaxial layers, grown by solid-source molecular-beam epitaxy, with excellent structural and optical quality are obtained over the whole compositional range. Optical spectroscopic techniques are used to study the electronic band structure as a function of composition. The low-temperature, direct excitonic band gap is found to be given by Eg(x)=1.979+0.704x eV and the lowest band gap becomes indirect for xc=0.50±0.02. The low-temperature excitonic direct band gap of Al0.52In0.48P is measured to be 2.680 eV.
Title: Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy
Description:
The compositional dependence of the electronic band structure of (AlxGa1−x)0.
52In0.
48P lattice matched to GaAs is reported.
Epitaxial layers, grown by solid-source molecular-beam epitaxy, with excellent structural and optical quality are obtained over the whole compositional range.
Optical spectroscopic techniques are used to study the electronic band structure as a function of composition.
The low-temperature, direct excitonic band gap is found to be given by Eg(x)=1.
979+0.
704x eV and the lowest band gap becomes indirect for xc=0.
50±0.
02.
The low-temperature excitonic direct band gap of Al0.
52In0.
48P is measured to be 2.
680 eV.
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