Research Progress in Al_1-xSc_xN Ferroelectric Thin Films

As a new generation of wurtzite-type ferroelectric material, Al_1-xSc_xN exhibits outstanding properties such as high remnant polarization, ideal rectangular hysteresis loops, compatibility with back-end-of-line (BEOL) CMOS processes, and stable ferroelectric phases. In recent years, this material has become a focus in the field of ferroelectrics, attracting extensive research efforts worldwide. This paper provides a comprehensive review of the research progress on Al_1-xSc_xN ferroelectric thin films. Regarding the factors influencing its ferroelectricity, the effects of Sc composition, substrate, deposition conditions, film thickness, testing frequency, and temperature are discussed. In terms of polarization switching mechanisms, the characteristics of ferroelectric domains, switching dynamics, nucleation sites, and fatigue behavior are summarized, offering insights into the underlying physical processes. From an application perspective, Al_1-xSc_xN thin films show great potential in ferroelectric randomaccess memory (FeRAM), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs), providing strong support for the development of next-generation high-density, lowpower ferroelectric memory and nanoelectronic devices.