Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Advanced Trench and Local Oxidation of Silicon (LOCOS) Isolation Technology for Ultra-Low-Power Bulk Dynamic Threshold Metal Oxide Semiconductor Field Effect Transistor (B-DTMOS)
View through CrossRef
We have developed a novel deep trench and local oxidation of silicon (LOCOS) isolation technology termed SITOS II in order to isolate the shallow-well regions necessary for realizing a high speed dynamic threshold metal oxide semiconductor field effect transistor (MOSFET) in a bulk wafer. Using this simple isolation technology, suppression of birds-beak formation, low junction leakage current, high punch-through voltage between shallow-wells, and sub-threshold transistor characteristics without kinks were achieved.
Title: Advanced Trench and Local Oxidation of Silicon (LOCOS) Isolation Technology for Ultra-Low-Power Bulk Dynamic Threshold Metal Oxide Semiconductor Field Effect Transistor (B-DTMOS)
Description:
We have developed a novel deep trench and local oxidation of silicon (LOCOS) isolation technology termed SITOS II in order to isolate the shallow-well regions necessary for realizing a high speed dynamic threshold metal oxide semiconductor field effect transistor (MOSFET) in a bulk wafer.
Using this simple isolation technology, suppression of birds-beak formation, low junction leakage current, high punch-through voltage between shallow-wells, and sub-threshold transistor characteristics without kinks were achieved.
Related Results
A Novel LOCal Oxidation of Silicon (LOCOS)-Type Isolation Technology Free of the Field Oxide Thinning Effect
A Novel LOCal Oxidation of Silicon (LOCOS)-Type Isolation Technology Free of the Field Oxide Thinning Effect
A novel LOCal Oxidation of Silicon (LOCOS)-type isolation technology free of the field oxide thinning effect, named POlysilicon (poly-Si) Spacer LOCOS (POS-LOCOS), has been devel...
Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function
Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function
With technology invading nanometer regime performance of the Metal-Oxide-semiconductor Field Effect Transistor is largely hampered by short channel effects. Most of the simulation ...
Study on Physical Simulation Experimental Technology of Ultra-low Permeability Large-scale Outcrop Model
Study on Physical Simulation Experimental Technology of Ultra-low Permeability Large-scale Outcrop Model
Abstract
Ultra-low permeability reserves have accounted for a very large proportion of China's proven reserves and undeveloped reserves at present, so it is very ...
Radiation effect and degradation mechanism in 65 nm CMOS transistor
Radiation effect and degradation mechanism in 65 nm CMOS transistor
Radiation effect of deep submicron semiconductor device has been extensively studied in recent years. However, fewer researches laid emphasis on the degradation characterization in...
Slab pull drives IBM Trench advance despite the weakened Philippine Sea Plate
Slab pull drives IBM Trench advance despite the weakened Philippine Sea Plate
The Izu-Bonin-Mariana (IBM) subduction zone has one of the most significant advancing trenches on Earth, but the mechanism responsible for its trench advance remains in dispute. Sl...
A Novel 4H-SiC Asymmetric MOSFET with Step Trench
A Novel 4H-SiC Asymmetric MOSFET with Step Trench
In this article, a silicon carbide (SiC) asymmetric MOSFET with a step trench (AST-MOS) is proposed and investigated. The AST-MOS features a step trench with an extra electron curr...
Semiconductors, Silicon Based
Semiconductors, Silicon Based
Abstract
Their unique properties have allowed silicon‐based semiconductor devices, especially metal/oxide/semiconductor field‐effect transistors (MOSFETs), t...
Diamond‐hexagonal silicon ribbons in silicon fins
Diamond‐hexagonal silicon ribbons in silicon fins
The formation of diamond‐hexagonal silicon [1‐3] or Ge [4] is recently reported under different experimental conditions. The dh‐phase has potential for application in optoelectroni...