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Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100)–2×1–H Surface
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Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)–2×1–H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.
Title: Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100)–2×1–H Surface
Description:
Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)–2×1–H surface is studied using ultrahigh-vacuum scanning tunneling microscopy.
Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires.
These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps.
The results are compared with first-principles theoretical calculations.
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