Edge Effect of Synthetic Antiferromagnetic Skyrmion in Nanotrack

Synthetic antiferromagnetic (SAF) skyrmions with high-speed mobility and stability might be used for building the next-generation spintronic devices and information storage, where the skyrmion Hall effect can be completely eliminated in the antiferromagnetically exchange-coupled magnetic bilayer. However, little research has been done about the influence of the edge effect on the generation and manipulation process of isolated synthetic antiferromagnetic skyrmion via spin-polarized current. Here, we study the influence of the edge effect on the current-induced generation and motion of skyrmion dynamics in SAF bilayer racetracks. Investigation results show that a stable SAF skyrmion can be successfully generated when the varying width of racetrack and the distance between the current injection position and the left side of racetrack are larger than a certain threshold. A wider racetrack leads to lower total energy and higher speed of the SAF skyrmion within a certain threshold, while a larger distance between the current injection position and the left side of the racetrack leads to lower total energy and velocity within another threshold. Our results are useful for understanding of SAF skyrmion physics and may provide a guidance for the nonvolatile computing devices.