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Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen
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The interstitial-type {311} planar defects introduced in wafers synthesized by separation by implanted oxygen (SIMOX) have been investigated by photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM). Deep-level PL of low-dose SIMOX wafers with doses of 2, 4, and 6×1017 cm-2 were analyzed under various excitations
with different penetration depths. In as-implanted wafers, the 0.903 eV line associated with the {311} defects appeared in the region below the oxygen implanted layer. Correspondingly, TEM observation revealed rod-like defects due to the {311} defects in the same region. After annealing, the 0.903 eV line disappeared and dislocation-related lines became visible. These results indicate that the {311} defects are generated below the implanted layer and are extended to dislocations after annealing.
Title: Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen
Description:
The interstitial-type {311} planar defects introduced in wafers synthesized by separation by implanted oxygen (SIMOX) have been investigated by photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM).
Deep-level PL of low-dose SIMOX wafers with doses of 2, 4, and 6×1017 cm-2 were analyzed under various excitations
with different penetration depths.
In as-implanted wafers, the 0.
903 eV line associated with the {311} defects appeared in the region below the oxygen implanted layer.
Correspondingly, TEM observation revealed rod-like defects due to the {311} defects in the same region.
After annealing, the 0.
903 eV line disappeared and dislocation-related lines became visible.
These results indicate that the {311} defects are generated below the implanted layer and are extended to dislocations after annealing.
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