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Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition
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In this study, we proposed the artificially designed channel structure in oxide thin-film transistors (TFTs) called a “step-composition gradient channel.” We demonstrated Al step-composition gradient Al-Zn-O (AZO) channel structures consisting of three AZO layers with different Al contents. The effects of stacking sequence in the step-composition gradient channel on performance and electrical stability of bottom-gate TFT devices were investigated with two channels of inverse stacking order (ascending/descending step-composition). The TFT with ascending step-composition channel structure (5 → 10 → 14 at. % Al composition) showed relatively negative threshold voltage (−3.7 V) and good instability characteristics with a reduced threshold voltage shift (Δ 1.4 V), which was related to the alignment of the conduction band off-set within the channel layer depending on the Al contents. Finally, the reduced Al composition in the initial layer of ascending step-composition channel resulted in the best field effect mobility of 4.5 cm2/V s. We presented a unique active layer of the “step-composition gradient channel” in the oxide TFTs and explained the mechanism of adequate channel design.
Title: Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition
Description:
In this study, we proposed the artificially designed channel structure in oxide thin-film transistors (TFTs) called a “step-composition gradient channel.
” We demonstrated Al step-composition gradient Al-Zn-O (AZO) channel structures consisting of three AZO layers with different Al contents.
The effects of stacking sequence in the step-composition gradient channel on performance and electrical stability of bottom-gate TFT devices were investigated with two channels of inverse stacking order (ascending/descending step-composition).
The TFT with ascending step-composition channel structure (5 → 10 → 14 at.
% Al composition) showed relatively negative threshold voltage (−3.
7 V) and good instability characteristics with a reduced threshold voltage shift (Δ 1.
4 V), which was related to the alignment of the conduction band off-set within the channel layer depending on the Al contents.
Finally, the reduced Al composition in the initial layer of ascending step-composition channel resulted in the best field effect mobility of 4.
5 cm2/V s.
We presented a unique active layer of the “step-composition gradient channel” in the oxide TFTs and explained the mechanism of adequate channel design.
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