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Adjusting the Morphology and Properties of SiC Nanowires by the Catalyst Control
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Abstract
Herein, we report the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, the pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, the emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000℃.The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.
Title: Adjusting the Morphology and Properties of SiC Nanowires by the Catalyst Control
Description:
Abstract
Herein, we report the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm).
The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.
e.
, the oxide-assisted growth mechanism and vapor- liquid-solid mechanism.
As a result, the pearl-chain-like SiC nanowires and straight SiC nanowires were obtained.
The prepared nanowires exhibited excellent photoluminescence properties, the emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000℃.
The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.
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