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Highly Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength
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Naphthalene-containing chemically amplified resists for ArF excimer laser exposure
are proposed, based on the concept of the absorption band shift by conjugation extension.
Newly developed ArF excimer resists show a high transparency at 193 nm wavelength, a
high sensitivity and a high contrast. The sensitivity of the resist is 150 mJ/cm2,
which is 20 times greater than that of poly(methylmethacrylate) (PMMA). Furthermore, a 0.16 µ m
pattern could be successfully fabricated by an ArF excimer laser stepper with 0.55 numerical
aperture (N
A) projection lens.
Title: Highly Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength
Description:
Naphthalene-containing chemically amplified resists for ArF excimer laser exposure
are proposed, based on the concept of the absorption band shift by conjugation extension.
Newly developed ArF excimer resists show a high transparency at 193 nm wavelength, a
high sensitivity and a high contrast.
The sensitivity of the resist is 150 mJ/cm2,
which is 20 times greater than that of poly(methylmethacrylate) (PMMA).
Furthermore, a 0.
16 µ m
pattern could be successfully fabricated by an ArF excimer laser stepper with 0.
55 numerical
aperture (N
A) projection lens.
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