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Resistive Switching Characteristics Based on Cu/VOx/Al Structure
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In this work, device cell with the Cu/VOx/Al structure was fabricated. The resistance switching performance was tested by Semiconductor Device Analyzer (Agilent B1500). This structure performs bipolar behavior. Controllable Set process and gradual Reset process, and various RLRS and RHRS could be obtained by controlling its current compliance (Icc) and reset stop voltage (Vstop), respectively. The Reset current could decrease to sub-10μA when Icc dropped to 40μA. The RHRS could be greater than 1E8 ohm with 1.5 V amplitude of applied reset voltage. This structure also has a good endurance (>1000 cycles) and reliable read disturbance times (>1000s) with 80oC ambient temperature. Local filament was observed in LRS by conducting atomic force microscope (CAFM), and Schottky barrier height modulation was obtained by I-V fitting in Reset process.
The Electrochemical Society
Title: Resistive Switching Characteristics Based on Cu/VOx/Al Structure
Description:
In this work, device cell with the Cu/VOx/Al structure was fabricated.
The resistance switching performance was tested by Semiconductor Device Analyzer (Agilent B1500).
This structure performs bipolar behavior.
Controllable Set process and gradual Reset process, and various RLRS and RHRS could be obtained by controlling its current compliance (Icc) and reset stop voltage (Vstop), respectively.
The Reset current could decrease to sub-10μA when Icc dropped to 40μA.
The RHRS could be greater than 1E8 ohm with 1.
5 V amplitude of applied reset voltage.
This structure also has a good endurance (>1000 cycles) and reliable read disturbance times (>1000s) with 80oC ambient temperature.
Local filament was observed in LRS by conducting atomic force microscope (CAFM), and Schottky barrier height modulation was obtained by I-V fitting in Reset process.
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