Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSe
View through CrossRef
Effects of substrate materials and their properties on photoassisted MOVPE of ZnSe using DMZn and DMSe as reactants have been investigated. For GaAs substrates, the presence of a thin predeposited ZnSe buffer layer and its quality greatly affect the subsequent film growth. However, for InP substrates, no essential effect of the buffer layer has been observed. Furthermore, in both substrates, the conduction type makes no significant difference to the results of photoassisted MOVPE. These results can be interpreted by a proposed growth model in which photoinduced excess holes in the ZnSe layer contribute to the film growth.
Title: Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSe
Description:
Effects of substrate materials and their properties on photoassisted MOVPE of ZnSe using DMZn and DMSe as reactants have been investigated.
For GaAs substrates, the presence of a thin predeposited ZnSe buffer layer and its quality greatly affect the subsequent film growth.
However, for InP substrates, no essential effect of the buffer layer has been observed.
Furthermore, in both substrates, the conduction type makes no significant difference to the results of photoassisted MOVPE.
These results can be interpreted by a proposed growth model in which photoinduced excess holes in the ZnSe layer contribute to the film growth.
Related Results
Photoassisted Metalorganic Vapor-Phase Epitaxy of Nitrogen-Doped ZnSe Using Tertiarybutylamine as Doping Source
Photoassisted Metalorganic Vapor-Phase Epitaxy of Nitrogen-Doped ZnSe Using Tertiarybutylamine as Doping Source
Nitrogen doping into ZnSe was carried out by photoassisted metalorganic vapor-phase epitaxy using diethylzinc and dimethylselenium. Tertiarybutylamine (t-BNH2) was used as a doping...
Photoacoustic and surface photovoltaic characteristics of L-Cysteine-capped ZnSe quantum dots with a core-shell structure
Photoacoustic and surface photovoltaic characteristics of L-Cysteine-capped ZnSe quantum dots with a core-shell structure
The study on photoelectronic characteristics of ZnSe quantum dots (QDs) is of significance for investigating its microelectronic structure and expanding its potential applications ...
Deep states in nitrogen-doped p-ZnSe
Deep states in nitrogen-doped p-ZnSe
A comparative study on deep levels in p-ZnSe grown by molecular beam epitaxy (MBE), metalorganic MBE (MOMBE), and metalorganic vapor phase epitaxy (MOVPE) has been carried out to e...
Initial Growth Processes of ZnSe on Cleaned GaAs(001) Surfaces by Metalorganic Vapor Phase Epitaxy
Initial Growth Processes of ZnSe on Cleaned GaAs(001) Surfaces by Metalorganic Vapor Phase Epitaxy
The effect of organic As flow during the thermal cleaning of GaAs substrates in metalorganic vapor phase epitaxy (MOVPE) and the initial growth of ZnSe on the cleaned GaAs surfaces...
Photoelectron characteristics of ZnSe quantum dots-sensitized mesoporous La-doped nano-TiO2 film
Photoelectron characteristics of ZnSe quantum dots-sensitized mesoporous La-doped nano-TiO2 film
In the paper, the core-shell ZnSe quantum dots (QDs)-sensitized mesoporous La-doped nano-TiO2 thin film is prepared by a direct adsorption method. Photoelectron characteristics, ph...
ZnSe-based organic-inorganic heterostructure diodes
ZnSe-based organic-inorganic heterostructure diodes
ZnSe-based organic-inorganic heterostructure diodes in which ZnSe layer was fabricated by electron-beam evaporation were studied. Electroluminescence from ZnSe peaking at 578nm was...
Formation of an Atomically Flat Surface of ZnSe on GaAs (001) by Metalorganic Vapor Phase Epitaxy
Formation of an Atomically Flat Surface of ZnSe on GaAs (001) by Metalorganic Vapor Phase Epitaxy
Surface morphologies of pseudomorphic ZnSe on GaAs (001) grown by metalorganic vapor phase epitaxy have been studied by atomic force microscopy. The observation of ZnSe gr...
Improvement of maize drought tolerance by foliar application of zinc selenide quantum dots
Improvement of maize drought tolerance by foliar application of zinc selenide quantum dots
Maize (Zea mays L.) is an important cereal crop grown in arid and semiarid regions of the world. During the reproductive phase, it is more frequently exposed to drought stress, res...