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Preparation of V2O5 Thin Film by Sol–Gel Technique and Pen Plotter Printing

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The work is dedicated to study of thin V2O5 film formation by pen plotter printing using vanadyl alkoxyacetylacetonate as hydrolytically active precursor. Solution of the prepared vanadyl butoxyacetylacetonate complex with 87% of butoxyl groups was used as functional ink for pen plotter printing of thin V2O5 film on surface of specialized chip. According to atomic force microscopy (AFM) and scanning electron microscopy (SEM), oxide film consists of nanorods 35–75 nm in thickness and 120–285 nm in length, with crystallite size of 54 ± 4 nm. Data from Rietveld refinement of the X-ray powder diffraction results and work function value (4.54 eV) indicate high content of defects (such as oxygen vacancies) in the material. Electrophysical properties study suggests that correlated barrier hopping of the charge carriers is the main conductivity mechanism. Conductivity activation energy Ea was found to be 0.24 eV.
Title: Preparation of V2O5 Thin Film by Sol–Gel Technique and Pen Plotter Printing
Description:
The work is dedicated to study of thin V2O5 film formation by pen plotter printing using vanadyl alkoxyacetylacetonate as hydrolytically active precursor.
Solution of the prepared vanadyl butoxyacetylacetonate complex with 87% of butoxyl groups was used as functional ink for pen plotter printing of thin V2O5 film on surface of specialized chip.
According to atomic force microscopy (AFM) and scanning electron microscopy (SEM), oxide film consists of nanorods 35–75 nm in thickness and 120–285 nm in length, with crystallite size of 54 ± 4 nm.
Data from Rietveld refinement of the X-ray powder diffraction results and work function value (4.
54 eV) indicate high content of defects (such as oxygen vacancies) in the material.
Electrophysical properties study suggests that correlated barrier hopping of the charge carriers is the main conductivity mechanism.
Conductivity activation energy Ea was found to be 0.
24 eV.

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