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Influence of polar distribution on piezoelectric response of aluminum nitride thin films

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The authors have investigated the influence of the crystal orientation and the polar distribution on the piezoelectric response of aluminum nitride (AlN) thin films prepared on Si, Mo∕Si, and Mo∕AlN-interlayer (IL)/Si substrates with increasing sputtering power. The crystal orientation of films prepared on Si improves with increasing sputtering power. On the other hand, the crystal orientation of films prepared on Mo∕Si and Mo∕AlN-IL∕Si hardly changes. However, the piezoelectric response of all the films drastically changes from negative to positive values and the predominant polarity changes from N polarity to Al polarity. We found the proportional relationship between the polar distribution and piezoelectric response.
Title: Influence of polar distribution on piezoelectric response of aluminum nitride thin films
Description:
The authors have investigated the influence of the crystal orientation and the polar distribution on the piezoelectric response of aluminum nitride (AlN) thin films prepared on Si, Mo∕Si, and Mo∕AlN-interlayer (IL)/Si substrates with increasing sputtering power.
The crystal orientation of films prepared on Si improves with increasing sputtering power.
On the other hand, the crystal orientation of films prepared on Mo∕Si and Mo∕AlN-IL∕Si hardly changes.
However, the piezoelectric response of all the films drastically changes from negative to positive values and the predominant polarity changes from N polarity to Al polarity.
We found the proportional relationship between the polar distribution and piezoelectric response.

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