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Unconventional Rashba Spin-Orbit Coupling on the Charge Conductance and Spin Polarization of a Ferromagnetic/Insulator/Ferromagnetic Rashba Metal Junction
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A ferromagnetic/insulator/ferromagnetic Rashba metal junction (FM/I/ FRM ) with both Rashba spin-orbit coupling ( RSOC ) and exchange energy splitting was theoretically studied. Two kinds of interactions in FRM generate the three metallic states; Rashba ring metal ( RRM ), anomalous Rashba metal (ARM), and normal Rashba metal ( NRM ) state. The transport properties of particles described by the scattering and the free-electron model, to calculate the conductance and the spin polarization. The conductance spectrum in the applied voltage shows the prominent features at the boundaries not only for the three states of the FRM , but also in the ARM state. In addition, the conductance in the RRM and ARM states are strongly influenced by both the thickness and barrier height of the insulator layer. The spin polarization was also found to get a high value in the ARM state which might be decisive towards FRM-based spintronic devices.
Title: Unconventional Rashba Spin-Orbit Coupling on the Charge Conductance and Spin Polarization of a Ferromagnetic/Insulator/Ferromagnetic Rashba Metal Junction
Description:
A ferromagnetic/insulator/ferromagnetic Rashba metal junction (FM/I/ FRM ) with both Rashba spin-orbit coupling ( RSOC ) and exchange energy splitting was theoretically studied.
Two kinds of interactions in FRM generate the three metallic states; Rashba ring metal ( RRM ), anomalous Rashba metal (ARM), and normal Rashba metal ( NRM ) state.
The transport properties of particles described by the scattering and the free-electron model, to calculate the conductance and the spin polarization.
The conductance spectrum in the applied voltage shows the prominent features at the boundaries not only for the three states of the FRM , but also in the ARM state.
In addition, the conductance in the RRM and ARM states are strongly influenced by both the thickness and barrier height of the insulator layer.
The spin polarization was also found to get a high value in the ARM state which might be decisive towards FRM-based spintronic devices.
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