Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Atomic Layer Deposition of thin Films Using Sequential Surface Reactions
View through CrossRef
AbstractThin films can be deposited with atomic layer control using sequential surface reactions. The atomic layer deposition (ALD) of compound and single-element films can be accomplished using the appropriate surface chemistry. This paper reviews the ALD of dielectric alumina (Al2O3) films and conducting tungsten (W) films. The Al2O3 films are deposited on submicron BN particles and the surface chemistry is monitored using Fourier transform infrared (FTIR) spectroscopy. Additional transmission electron microscopy (TEM) studies investigated the conformality of the Al2O3 growth on the BN particles. FTIR investigations of the surface chemistry during W ALD are performed on nanometer-sized Si02 particles. Additional in situ spectroscopy ellipsometry studies of W ALD on Si(100) established the W ALD growth rates. Al2O3 and W ALD both illustrate the potential of ALD to obtain conformal and atomic layer controlled thin film growth using sequential surface reactions.
Title: Atomic Layer Deposition of thin Films Using Sequential Surface Reactions
Description:
AbstractThin films can be deposited with atomic layer control using sequential surface reactions.
The atomic layer deposition (ALD) of compound and single-element films can be accomplished using the appropriate surface chemistry.
This paper reviews the ALD of dielectric alumina (Al2O3) films and conducting tungsten (W) films.
The Al2O3 films are deposited on submicron BN particles and the surface chemistry is monitored using Fourier transform infrared (FTIR) spectroscopy.
Additional transmission electron microscopy (TEM) studies investigated the conformality of the Al2O3 growth on the BN particles.
FTIR investigations of the surface chemistry during W ALD are performed on nanometer-sized Si02 particles.
Additional in situ spectroscopy ellipsometry studies of W ALD on Si(100) established the W ALD growth rates.
Al2O3 and W ALD both illustrate the potential of ALD to obtain conformal and atomic layer controlled thin film growth using sequential surface reactions.
Related Results
Alternative Entrances: Phillip Noyce and Sydney’s Counterculture
Alternative Entrances: Phillip Noyce and Sydney’s Counterculture
Phillip Noyce is one of Australia’s most prominent film makers—a successful feature film director with both iconic Australian narratives and many a Hollywood blockbuster under his ...
Spray Coated Nanocellulose Films Productions, Characterization and Application
Spray Coated Nanocellulose Films Productions, Characterization and Application
Nanocellulose (NC) is a biodegradable, renewable and sustainable material. It has strong potential to use as a functional material in various applications such as barriers, coating...
Atomic electron tomography: 3D structures without crystals
Atomic electron tomography: 3D structures without crystals
BACKGROUND
To understand material properties and functionality at the most fundamental level, one must know the three-dimensional (3D) positions of atoms with high prec...
High tunable dielectric properties of Ce and Mg alternately doped Ba0.6Sr0.4TiO3 films
High tunable dielectric properties of Ce and Mg alternately doped Ba0.6Sr0.4TiO3 films
For barium strontium titanate (Ba0.6Ti0.4TiO3, BST) films used in tunable microwave devices, they must have excellent structural characteristics and outstanding combination of diel...
Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
Metalorganic chemical vapour deposition and molecular beam epitaxy have already been demonstrated to be successful techniques for obtaining high-quality epitaxial GaN layers with l...
Wax Deposition Correlation-Application in Multiphase Wax Deposition Models
Wax Deposition Correlation-Application in Multiphase Wax Deposition Models
Abstract
The two most dominant factors in wax deposition are:Brownian diffusion of wax forming molecules toward and adhesion of wax crystals at the wall. The rate...
Formation of HgCdTe by Electrochemical Atomic Layer Epitaxy (EC-ALE)
Formation of HgCdTe by Electrochemical Atomic Layer Epitaxy (EC-ALE)
Formation of Hg(1-x)CdxTe (MCT), thin films by electrochemical atomic layer epitaxy (EC-ALE) is reported. EC-ALE is the electrochemical analog of atomic layer epitaxy (ALE) and ...
Kinetics study of anodic electrophoretic deposition for polytetrafluoroethylene (PTFE) coatings on AZ31 magnesium alloy
Kinetics study of anodic electrophoretic deposition for polytetrafluoroethylene (PTFE) coatings on AZ31 magnesium alloy
AbstractElectrophoretic deposition (EPD) coating has become a hot topic due to its simple experiment, wide application, and wide material range. In this study, the PTFE coating was...