Phase Microstructure, Electric and Dielectric Evaluation of Ti 4+ ModifiedBa(Zn1/3Nb2(1-x)/3Ti2x/3)O3 Ceramics

Dielectric materials play a crucial role in modern technologies, enabling diverse applications ranging from terrestrial and satellite communications to energy storage and advanced microelectronic devices. However, next-generation wireless communication systems require the development of advanced dielectric ceramics that possess high permittivity (εᵣ), low dielectric loss (tanδ), and temperature stability. In this study, we propose a novel Ba(Zn1/3Nb2(1-x)/3Ti2x/3)O3 (BZNT) compositional system, focusing on the impact of Ti⁴⁺ substitution on their structural, microstructural, and dielectric properties. The XRD measurements reveal the cubic symmetry and a systematic peak shift to higher angle indicating contraction in the unit cell volume from 4.0540 Å to 4.0443 Å with increasing Ti4+ content. SEM micrographs revealed a dense microstructure with decrease in grain size from 0.87 µm to 0.187 µm showing a reduced porosity at higher dopant level. Additionally, the FTIR spectra revealed Ti-O, Nb-C and H-O-H single complex perovskite bond, suggesting the existence of Ti and absence of residual carbonates after complete sintering. Temperature dependent dielectric constant increased to 4257 at 500 °C for 5% with a phase transition to paraelectric at Curie Point shifting to lower temperature indicates a relaxation behavior in the samples.  Furthermore, I-V curve for BZNT show linear and ohmic behavior at low temperature while an enhancement in the current at high temperature was observed.