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Negative Differential Resistance of CaF 2/CdF 2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy
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Room-temperature negative differential resistance (NDR) of triple-barrier
cadmium di-fluoride (CdF2)/calcium di-fluoride (CaF2) heterostructure
resonant-tunneling diode (RTD) on a Si(111) substrate has been demonstrated.
CdF2/CaF2 multilayered heterostructures were grown on a Si(111) substrate
using partially ionized beam epitaxy to obtain atomically flat interfaces.
The RTD structures, which consist of triple CaF2 energy barriers and double
CdF2 quantum wells, were fabricated by electron beam (EB) lithography
and dry etching to avoid thermal and chemical damage to the CdF2 layers.
In the current-voltage characteristics of the RTD, NDR was clearly observed
even at room temperature and
the maximum peak-to-valley (P/V) ratio was about 6.
Title: Negative Differential Resistance of CaF 2/CdF 2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy
Description:
Room-temperature negative differential resistance (NDR) of triple-barrier
cadmium di-fluoride (CdF2)/calcium di-fluoride (CaF2) heterostructure
resonant-tunneling diode (RTD) on a Si(111) substrate has been demonstrated.
CdF2/CaF2 multilayered heterostructures were grown on a Si(111) substrate
using partially ionized beam epitaxy to obtain atomically flat interfaces.
The RTD structures, which consist of triple CaF2 energy barriers and double
CdF2 quantum wells, were fabricated by electron beam (EB) lithography
and dry etching to avoid thermal and chemical damage to the CdF2 layers.
In the current-voltage characteristics of the RTD, NDR was clearly observed
even at room temperature and
the maximum peak-to-valley (P/V) ratio was about 6.
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