Study of Electrical Transport Properties of CZTS/MoSe2/glass Heterostructures

Objective: In this manuscript, we have investigated the temperature dependent electrical transport properties of CZTS/MoSe2/glass heterostructures for solar cell applications. Methods: MoSe2 coated CZTS diode thin films were fabricated using sol-gel and thermal evaporation methods. During first step, CZTS thin films were grown on glass substrate by sol-gel process and in the 2nd step, MoSe2 thin films were grown on CZTS/glass using thermal evaporation method. The grown structures were post growth annealed at 450-500℃ using a muffle furnace. Results: The structure of each layer was verified by XRD and Raman spectroscopy. SEM analysis has confirmed the smooth surface formation of thin films with a uniform distribution of grains. Electrical properties have been studied by two probe technique after the junction formation between CZTS and MoSe2. Transport properties of the junction showed its semiconductor nature. The resistivity varies from 0 to 7×109ohm-cm for the sample annealed at 450℃ and varies 0 to 3×1010ohm-cm for the sample annealed at 500℃. Conclusion: All these parameters made synthesized thin films promising candidates for higher efficiency solar cells, radio modulation and power conversion applications. The effect of the MoSe2 layer on the microstructure and performance of the CZTS film is discussed here in detail. These results serve as guiding principles for preparing high-quality CZTS thin films for potential applications in low-cost solar cells.