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Static and Dynamic Magnetic Properties of FeGa/FeNi (FeNi/FeGa) Bilayer Structures
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FeGa/FeNi bilayer structures with different deposition order were fabricated by the electrodeposition method on indium tin oxide (ITO) substrates. The structure, morphology, static and dynamic magnetic properties of FeGa/FeNi (FeNi/FeGa) films were investigated. The bilayer structures exhibit extremely various magnetic properties with different deposition order which could be attributed to the different coupling interaction in the interface. When FeGa is on top, the bilayer structures show lower coercivity than when FeNi is on top. Meanwhile, increase of the proportion of FeNi in the bilayer structure could affect the Hc and Mr/Ms. The ferromagnetic resonance peak of FeGa on top moves to a high field compared with FeNi on top. Moreover, FeGa on top shows improved complex permeability and a clear resonant phenomenon of the magnetization. These properties make FeGa/FeNi bilayer structure a potential candidate for high-frequency application.
Title: Static and Dynamic Magnetic Properties of FeGa/FeNi (FeNi/FeGa) Bilayer Structures
Description:
FeGa/FeNi bilayer structures with different deposition order were fabricated by the electrodeposition method on indium tin oxide (ITO) substrates.
The structure, morphology, static and dynamic magnetic properties of FeGa/FeNi (FeNi/FeGa) films were investigated.
The bilayer structures exhibit extremely various magnetic properties with different deposition order which could be attributed to the different coupling interaction in the interface.
When FeGa is on top, the bilayer structures show lower coercivity than when FeNi is on top.
Meanwhile, increase of the proportion of FeNi in the bilayer structure could affect the Hc and Mr/Ms.
The ferromagnetic resonance peak of FeGa on top moves to a high field compared with FeNi on top.
Moreover, FeGa on top shows improved complex permeability and a clear resonant phenomenon of the magnetization.
These properties make FeGa/FeNi bilayer structure a potential candidate for high-frequency application.
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