Optimization of Resistance Switching Effect Based on Semiconductor Material Tin

AbstactThe "Sandwich" structure of the traditional ReRAM device always uses high resistance material as an intermediate layer. The resistance random memory of Ag/TiN/ITO structure devices were prepared by ion sputtering method based on the low resistivity semiconductor material TiN in this work. The non-volatility, stability and reproducibility of the Ag/TiN/ITO devices were tested in air environment. The results demonstrated that the Ag/TiN/ITO resistance random access memory has a stable and distinguishable resistance on/off ratio, and its high and low resistance states can be stably switched for 50 cycles with a time retention characteristic of about 600s. Then, the device of Ag/TiN/Ag/ITO multi-layer structure and Au/TiN/ITO structure were prepared by adding silver layers and changing electrodes, respectively. Compared to the Ag/TiN/ITO structure devices, both devices exhibit enhanced resistance switching effect with more excellent stability and cycle durability (330 cycles, 10 3 s; 600 cycles, 10 4 s). It is shown that choosing appropriate electrodes and optimizing device structure is beneficial to improve the resistance switching performance of resistive random access memory devices. This work helps to understand the effect of different inter facial reactions between electrode materials and material interfaces on the resistive switching behavior, and also provides new application prospects for TiN materials.