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Observation of InP Surfaces after (NH4)2Sx Treatment by a Scanning Tunneling Microscope
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InP surfaces after (NH4)2S
x
treatment were observed by a scanning tunneling microscope (STM) in air. The stabilized image of the flat surface was observed on the sample after (NH4)2S
x
treatment for 30 s. The rms roughness was measured as 0.08 nm. When no surface treatment was applied, the surface was very rough when observed in the constant current mode. Since the STM image of the same sample with Au/Pd coating showed a flat surface and the current-voltage characteristics at the convex and concave portions were different, fluctuation of electron states on the InP surface is concluded to be the cause of the observed roughness. This result shows that a stable InP surface can be obtained by (NH4)2S
x
treatment.
Title: Observation of InP Surfaces after (NH4)2Sx Treatment by a Scanning Tunneling Microscope
Description:
InP surfaces after (NH4)2S
x
treatment were observed by a scanning tunneling microscope (STM) in air.
The stabilized image of the flat surface was observed on the sample after (NH4)2S
x
treatment for 30 s.
The rms roughness was measured as 0.
08 nm.
When no surface treatment was applied, the surface was very rough when observed in the constant current mode.
Since the STM image of the same sample with Au/Pd coating showed a flat surface and the current-voltage characteristics at the convex and concave portions were different, fluctuation of electron states on the InP surface is concluded to be the cause of the observed roughness.
This result shows that a stable InP surface can be obtained by (NH4)2S
x
treatment.
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