Search engine for discovering works of Art, research articles, and books related to Art and Culture
ShareThis
Javascript must be enabled to continue!

Hot Carrier Enhancement of Dember Photorefractive Space-Charge Fields in Zincblende Semiconductors

View through CrossRef
We use a novel, nondegenerate, polarization-sensitive, transient-grating technique1 to monitor the picosecond dynamics of the photorefractive effect in undoped CdTe and InP:Fe at 960 nm. The technique circumvents the limited temporal resolution of the two-beam coupling geometry by using a time-delayed third probe pulse (with a duration of <5 psec) to read the gratings written in the semiconductor. The technique also exploits the crystal symmetry of zincblende semiconductors by using an optically induced anisotropy in the crystal index of refraction2 to separate the photorefractive gratings from the stronger, co-existing instantaneous bound-electronic and freecarrier gratings. In both semiconductors, the photorefractive effect is associated with the Dember field between mobile electron-hole pairs, in contrast to the more conventional photorefractive space-charge field connected with the separation of a mobile carriers species from a stationary, but oppositely charged, mid-gap state. In the undoped CdTe sample, which possesses no optically-active mid-gap levels, the electron-hole pairs are produced by two-photon absorption of 1.3 eV photons across the 1.44 eV band-gap of the semiconductor. The resultant ~1 eV excess carrier energy, which allows hot carrier transport to dominate the initial formation of the space-charge field, causes up to an order of magnitude enhancement in the photorefractive effect on picosecond timescales. After the carriers have cooled and the initial overshoot in the space-charge field has decayed, the photorefractive effect is observed to decay as the Dember field is destroyed by ambipolar diffusion of the electron-hole pairs across the grating period. In InP:Fe on the other hand, the electron-hole pairs are produced predominantly by direct single-photon band-to-band absorption into the band-tail of the semiconductor (band-gap ~1.35 eV), since the iron dopant only dominates the linear absorption at longer wavelengths. This means that the carriers are generated with little excess energy. Consequently, no hot carrier enhancement of the photorefractive effect was observed, and once formed, the Dember space-charge field decayed directly by ambipolar diffusion.
Title: Hot Carrier Enhancement of Dember Photorefractive Space-Charge Fields in Zincblende Semiconductors
Description:
We use a novel, nondegenerate, polarization-sensitive, transient-grating technique1 to monitor the picosecond dynamics of the photorefractive effect in undoped CdTe and InP:Fe at 960 nm.
The technique circumvents the limited temporal resolution of the two-beam coupling geometry by using a time-delayed third probe pulse (with a duration of <5 psec) to read the gratings written in the semiconductor.
The technique also exploits the crystal symmetry of zincblende semiconductors by using an optically induced anisotropy in the crystal index of refraction2 to separate the photorefractive gratings from the stronger, co-existing instantaneous bound-electronic and freecarrier gratings.
In both semiconductors, the photorefractive effect is associated with the Dember field between mobile electron-hole pairs, in contrast to the more conventional photorefractive space-charge field connected with the separation of a mobile carriers species from a stationary, but oppositely charged, mid-gap state.
In the undoped CdTe sample, which possesses no optically-active mid-gap levels, the electron-hole pairs are produced by two-photon absorption of 1.
3 eV photons across the 1.
44 eV band-gap of the semiconductor.
The resultant ~1 eV excess carrier energy, which allows hot carrier transport to dominate the initial formation of the space-charge field, causes up to an order of magnitude enhancement in the photorefractive effect on picosecond timescales.
After the carriers have cooled and the initial overshoot in the space-charge field has decayed, the photorefractive effect is observed to decay as the Dember field is destroyed by ambipolar diffusion of the electron-hole pairs across the grating period.
In InP:Fe on the other hand, the electron-hole pairs are produced predominantly by direct single-photon band-to-band absorption into the band-tail of the semiconductor (band-gap ~1.
35 eV), since the iron dopant only dominates the linear absorption at longer wavelengths.
This means that the carriers are generated with little excess energy.
Consequently, no hot carrier enhancement of the photorefractive effect was observed, and once formed, the Dember space-charge field decayed directly by ambipolar diffusion.

Related Results

[RETRACTED] Rhino XL Male Enhancement v1
[RETRACTED] Rhino XL Male Enhancement v1
[RETRACTED]Rhino XL Reviews, NY USA: Studies show that testosterone levels in males decrease constantly with growing age. There are also many other problems that males face due ...
Seditious Spaces
Seditious Spaces
The title ‘Seditious Spaces’ is derived from one aspect of Britain’s colonial legacy in Malaysia (formerly Malaya): the Sedition Act 1948. While colonial rule may seem like it was ...
Nanosecond Photorefractive Effects in KNbO3
Nanosecond Photorefractive Effects in KNbO3
Two laser beams interfering in a photorefractive crystal ionize light absorbing impurities and produce two initially overlapping concentration gratings. These two gratings consist ...
Interband Photorefractive Effects in KNbO3 crystals
Interband Photorefractive Effects in KNbO3 crystals
1. Introduction Photorefractive gratings are most often produced by illumination of an electro-optic crystal with laser light below the band gap and the absorbed photons induce pho...
Morphology Effects on Space Charge Characteristics of Low Density Polyethylene
Morphology Effects on Space Charge Characteristics of Low Density Polyethylene
Low density polyethylene (LDPE) film samples with different morphology were prepared by three kinds of annealing methods which were different in cooling rates in this study. A puls...
Low Bandgap Organic Semiconductors for Photovoltaic Applications
Low Bandgap Organic Semiconductors for Photovoltaic Applications
Photovoltaic is one of the best low-cost alternative energy sources. In this paper, organic semiconductors were explored as light harvesters due to their extraordinary properties, ...
Space Safety through situational awareness
Space Safety through situational awareness
Space Situational Awareness (SSA) entails the detection, tracking, and comprehension of spaceborne objects and phenomena that could potentially affect Earth or space operations. It...
Genetic Carrier Testing
Genetic Carrier Testing
Abstract Genetic carrier testing includes tests for the heterozygous status of a recessively inherited disorder in individuals wh...

Back to Top