Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
View through CrossRef
We studied selective area growth (SAG) of GaN using a tungsten (W)
mask with an atmospheric metalorganic vapor phase epitaxy (MOVPE) system.
No GaN polycrystals were observed on the W mask regions, and the selectivity
of GaN growth on window regions proved to be excellent.
The GaN stripes developed into different shapes depending on the direction
of stripe mask patterns.
If the stripe was along <1120>, a triangular shape with {1101}
facets was formed.
If the stripe was along <1100>, a trapezoidal shape with a smooth
(0001) surface on top and rough surfaces on both sides was obtained.
The lateral overgrowth of GaN on the W mask occurred in both cases.
The growth mechanisms and the facet formation were similar to those
found in SAG using a SiO2 mask.
IOP Publishing
Title: Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
Description:
We studied selective area growth (SAG) of GaN using a tungsten (W)
mask with an atmospheric metalorganic vapor phase epitaxy (MOVPE) system.
No GaN polycrystals were observed on the W mask regions, and the selectivity
of GaN growth on window regions proved to be excellent.
The GaN stripes developed into different shapes depending on the direction
of stripe mask patterns.
If the stripe was along <1120>, a triangular shape with {1101}
facets was formed.
If the stripe was along <1100>, a trapezoidal shape with a smooth
(0001) surface on top and rough surfaces on both sides was obtained.
The lateral overgrowth of GaN on the W mask occurred in both cases.
The growth mechanisms and the facet formation were similar to those
found in SAG using a SiO2 mask.
Related Results
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates
Gallium nitride (GaN) has great potential applications in high-power and high-frequency electrical devices due to its superior physical properties.High dislocation density of GaN g...
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Systematic studies were performed on the influence of different cap layers of i-GaN, n-GaN, p-GaN and InGaN on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on sapphi...
A Review of Tungsten Resources and Potential Extraction from Mine Waste
A Review of Tungsten Resources and Potential Extraction from Mine Waste
Tungsten is recognized as a critical metal due to its unique properties, economic importance, and limited sources of supply. It has wide applications where hardness, high density, ...
Comparision of structural property of cubic GaN films grown by metalorganic vapor phase epitaxy on (311) and on (001) GaAs substrates / Nuttapong Discharoen
Comparision of structural property of cubic GaN films grown by metalorganic vapor phase epitaxy on (311) and on (001) GaAs substrates / Nuttapong Discharoen
Strain and hexagonal phase generation in c-GaN layers grown by metalorganic vapor phase epitaxy on (001) GaAs and on (311) GaAs substrates were investigated using HRXRD and Raman s...
Characterization of MOVPE‐grown GaN layers on GaAs (111)B with a cubic‐GaN (111) epitaxial intermediate layer
Characterization of MOVPE‐grown GaN layers on GaAs (111)B with a cubic‐GaN (111) epitaxial intermediate layer
AbstractWe have proposed the use of cubic‐GaN (c‐GaN) as an intermediate layer for the metalorganic vapor phase epitaxy (MOVPE) growth of hexagonal‐GaN (h‐GaN) on GaAs (111)B subst...
Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via Metalorganic Vapor-Phase Epitaxy (MOVPE)
Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via Metalorganic Vapor-Phase Epitaxy (MOVPE)
Ambient gas effect on the epitaxial lateral overgrowth (ELO) of GaN via metalorganic vapor-phase epitaxy (MOVPE) on a MOVPE-grown GaN (0001) / sapphire (0001) substrate with a SiO2...
Influence of growth temperature on structural and optical properties of laser MBE grown epitaxial thin GaN films on a-plane sapphire
Influence of growth temperature on structural and optical properties of laser MBE grown epitaxial thin GaN films on a-plane sapphire
Epitaxial thin GaN films (∼60 nm) have been grown on a-plane sapphire substrates at different growth temperatures (500–700 °C) using laser molecular beam epitaxy (LMBE). The effect...
Van der Waals coherent epitaxy of GaN and InGaN/GaN multi-quantum-well via a graphene inserted layer
Van der Waals coherent epitaxy of GaN and InGaN/GaN multi-quantum-well via a graphene inserted layer
GaN-based films grown on sp3-bonded single-crystalline substrates can maintain the coherent growth character. However, exfoliating III-nitride films from these substrates proves di...