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Effect of Yttria-Stabilized Zirconia Thickness on Crystal Structure and Electric Property of Epitaxial CeO2/Yttria-Stabilized Zirconia Buffer Layer in Metal/Ferroelectric/Insulator/Semiconductor Structure
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The effect of yttria-stabilized zirconia (YSZ) film thickness on crystal structure and electric properties of epitaxial CeO2/YSZ films was investigated. The CeO2/YSZ films were prepared on Si(001) substrates by pulsed laser deposition (PLD). X-ray diffraction measurements and reflection high energy electron diffraction (RHEED) observation indicated that heteroepitaxial growths of CeO2 and YSZ were achieved with a cube-on-cube relation (CeO2[100] ∥YSZ[100] ∥Si[100]) regardless of the YSZ film thickness. Measurement of C–V characteristics showed ion drift; this ion drift decreased with the decrease of YSZ film thickness. Measurement of I–V characteristics indicated that the leakage-current for all films was low enough for the insulating layer in the metal/ferroelectric/insulator/semiconductor (MFIS) structure, however for the films with a thicker YSZ layer, a difference in current was observed at various measurement positions. The reason for this was ascribed to the differences in the microstructure.
Title: Effect of Yttria-Stabilized Zirconia Thickness on Crystal Structure and Electric Property of Epitaxial CeO2/Yttria-Stabilized Zirconia Buffer Layer in Metal/Ferroelectric/Insulator/Semiconductor Structure
Description:
The effect of yttria-stabilized zirconia (YSZ) film thickness on crystal structure and electric properties of epitaxial CeO2/YSZ films was investigated.
The CeO2/YSZ films were prepared on Si(001) substrates by pulsed laser deposition (PLD).
X-ray diffraction measurements and reflection high energy electron diffraction (RHEED) observation indicated that heteroepitaxial growths of CeO2 and YSZ were achieved with a cube-on-cube relation (CeO2[100] ∥YSZ[100] ∥Si[100]) regardless of the YSZ film thickness.
Measurement of C–V characteristics showed ion drift; this ion drift decreased with the decrease of YSZ film thickness.
Measurement of I–V characteristics indicated that the leakage-current for all films was low enough for the insulating layer in the metal/ferroelectric/insulator/semiconductor (MFIS) structure, however for the films with a thicker YSZ layer, a difference in current was observed at various measurement positions.
The reason for this was ascribed to the differences in the microstructure.
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