Distribution Coefficient of Arsenic Durng Liquid-Phase Epitaxy Layer Growth of Phosphide-Arsenide of Gallium

It is crucial to know the distribution coefficients of chemical elements in melts. This is essential for obtaining a given composition and properties of epitaxial layers grown from the liquid phase, for determining the regimes of high purification of materials obtained by zone melting, for producing the desired gradient of distribution of alloying elements throughout the layers of construction materials treated by chemical-thermal methods, etc. This paper presents the results of computing the distribution coefficient of arsenic during the growth of layers of phosphide-arsenide of gallium from the liquid phase (molten gallium), saturated with phosphorus. We also obtain the dependencies between the distribution coefficient of arsenic, the temperature and the concentration of arsenic inside the gallium melt during the growth of epitaxial layers. As well a practical application of the results with a given gradient of concentration for the gallium arsenide layer is demonstrated.